74HC245N

Si-gate CMOS device, DIP, 1.5V

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PartNumber:: 74HC245N

Brand:: NXP Semiconductors - nxp | Pack: DIP | D/C: 10+

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Products Upload time: 2011-07-23

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Part Number:74HC245N
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Product Summary

The 74HC245N is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL). The 74HC245N is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The device features an output enable input (OE) for easy cascading and a send/receive input (DIR) for direction control. OE controls the outputs so that the buses are effectively isolated.

Parametrics

74HC245N characteristics: (1)On the condition of VCC = 2.0 V, VIH HIGH-level input voltage: min=1.5V, typ=1.2V; On the condition of VCC = 4.5 V, VIH: min=3.15V, typ=2.4V; On the condition of VCC = 6.0 V, VIH: min=4.2V, typ=3.2V; (2)On the condition of VCC = 2.0 V, VIL LOW-level input voltage: typ=0.8V, max=0.5V; On the condition of VCC = 4.5 V, VIL: typ=2.1V, max=1.35V; On the condition of VCC = 6.0 V, VIL: typ=2.8V, max=1.8V; (3)On the conditions of VI = VIH or VIL, IO = -20 μA; VCC = 2.0 V, VOH HIGH-level output voltage: min=1.9V, typ=2.0V; On the conditions of VI = VIH or VIL, IO = -20 μA; VCC = 4.5 V, VOH: min=4.4V, typ=4.5V.

Features

74HC245N features: (1)Octal bidirectional bus interface; (2)Non-inverting 3-state outputs; (3)Multiple package options; (4)Complies with JEDEC standard no. 7A; (5)ESD protection: HBM EIA/JESD22-A114-B exceeds 2000 V; MM EIA/JESD22-A115-A exceeds 200 V; (6)Specified from -40 ℃ to +85 ℃ and from -40 ℃ to +125 ℃.