Product Summary

The 2SD2686 is a Transistor. It is designed for Solenoid Drive and Motor Drive Applications.

Parametrics

2SD2686 absolute maximum ratings: (1)Collector-base voltage VCBO: 50 V; (2)Collector-emitter voltage VCEO: 60±10 V; (3)Emitter-base voltage VEBO: 8 V; (4)Collector current DC IC: 1 A, Pulse ICP: 3 A; (5)Base current IB: 0.5 A; (6)Collector power dissipation DC: 1.0 W; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55 to 150 ℃.

Features

2SD2686 features: (1)High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A); (2)Zener diode included between collector and base.

Diagrams

2SD2686 diagram

2SD200
2SD200
Other

Data Sheet
Negotiable 
2SD2000
2SD2000
Other

Data Sheet
Negotiable 
2SD20000P
2SD20000P

TRANS NPN LF 60VCEO 4A TO-220F
Data Sheet
Negotiable 
2SD201
2SD201
Other

Data Sheet
Negotiable 
2SD2012
2SD2012
STMicroelectronics
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Data Sheet
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2SD2012(F,M)
2SD2012(F,M)
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Transistors Bipolar (BJT) NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App
Data Sheet
0-1: $0.30
1-10: $0.28
10-100: $0.25
100-250: $0.25