Product Summary
Parametrics
Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 30V
Manufacturer: Rohm Semiconductor
Supplier Device Package: 3-SMT
Current - Collector (Ic) (Max): 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Frequency - Transition: 330MHz
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SD2657KT146 |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 30V 1.5A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
2SD200 |
Other |
Data Sheet |
Negotiable |
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2SD2000 |
Other |
Data Sheet |
Negotiable |
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2SD20000P |
TRANS NPN LF 60VCEO 4A TO-220F |
Data Sheet |
Negotiable |
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2SD201 |
Other |
Data Sheet |
Negotiable |
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2SD2012 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Silcon Pwr Trans |
Data Sheet |
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2SD2012(F,M) |
Toshiba |
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