Product Summary
The TIP47 is an NPN silicon power transistor.
Parametrics
TIP47 absolute maximum ratings: (1)Collector-base voltage (IE = 0)VCBO: 350 V; (2)Collector-emitter voltage (IB = 0)VCEO: 250 V; (3)Emitter-base voltage VEBO: 5 V; (4)Continuous collector current IC: 1 A; (5)Peak collector current ICM: 2 A; (6)Continuous base current IB: 0.6 A; (7)Continuous device dissipation at (or below)25°C case temperature Ptot: 40 W; (8)Continuous device dissipation at (or below)25°C free air temperature Ptot: 2 W; (9)Unclamped inductive load energy: 20 mJ; (10)Operating junction temperature range Tj: -65 to +150 °C; (11)Storage temperature range Tstg: -65 to +150 °C; (12)Lead temperature 3.2 mm from case for 10 seconds TL: 260 °C.
Features
TIP47 features: (1)40 W at 25°C Case Temperature; (2)1 A Continuous Collector Current; (3)2 A Peak Collector Current; (4)20 mJ Reverse-Energy Rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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TIP47 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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TIP47G |
ON Semiconductor |
Transistors Bipolar (BJT) 1A 250V 40W NPN |
Data Sheet |
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TIP47-S |
Bourns |
Transistors Bipolar (BJT) 250V 1A NPN |
Data Sheet |
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TIP47TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Sil Transistor |
Data Sheet |
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