Product Summary
The TC7SH08FUTE85L is a Single 2-Input AND Gate. The TC7SH08FUTE85L achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 7V can be applied to the input pins without regard to the supply voltage. The TC7SH08FUTE85L can be used to interface 5V to 3V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
Parametrics
TC7SH08FUTE85L absolute maximum ratings: (1)Supply voltage VCC: -0.5 to 7 V; (2)DC input voltage VIN: -0.5 to 7 V; (3)DC output voltage VOUT: -0.5 to VCC + 0.5 V; (4)Input diode current IIK: -20 mA; (5)Output diode current IOKL: ±20mA; (6)DC output current IOUT: ±25 mA; (7)DC VCC/ground current ICC: ±50 mA; (8)Power dissipation PD: 200mW; (9)Storage temperature Tstg: -65℃ to 150℃; (10)Lead temperature (10 s) TL: 260℃.
Features
TC7SH08FUTE85L features: (1)High speed: tpd = 4.3ns (typ.) at VCC = 5V; (2)Low power dissipation : ICC = 2μA(max) at Ta = 25℃; (3)High noise immunity : VNIH = VNIL = 28% VCC (min); (4)power down protection is provided on all inputs; (5)Wide operating voltage range : VCC= 2 to 5.5V; (6)Banlanced Propagation Delays: tpLH ≈ tpHL.
Diagrams
TC7S00F(T5L,F,T) |
IC GATE NAND 2INP 74HC00 5-SSOP |
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TC7S00F(TE85L) |
IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
Negotiable |
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TC7S00F(TE85L,F) |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
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TC7S00FT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FUT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S02F(T5L,F,T) |
Toshiba (VA) |
IC GATE NOR 2INPUT 74HC02 5-SSOP |
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