(China (Mainland))
Product Summary
The SST39VF160-70-4C-EK is a 1M x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160-70-4C-EK write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF160 write (Program or Erase) with a 2.7-3.6V power supply. The device SST39VF160-70-4C-EK conforms to JEDEC standard pinouts for x16 memories.
Parametrics
SST39VF160-70-4C-EK absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD + 0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Surface Mount Lead Soldering Temperature (3 Seconds) : 240℃; (8)Output Short Circuit Current1: 50 mA.
Features
SST39VF160-70-4C-EK features: (1)Organized as 1M x16; (2)Single Voltage Read and Write Operations: 2.7-3.6V; (3)Superior Reliability: Endurance: 100,000 Cycles (typical); Greater than 100 years Data Retention; (4)Low Power Consumption: Active Current: 15 mA (typical); Standby Current: 4 μA (typical); Auto Low Power Mode: 4μA (typical); (5)Sector-Erase Capability: Uniform 2 KWord sectors; (6)Fast Read Access Time: 55 ns for SST39LF160; 70 and 90 ns for SST39VF160; (7)Latched Address and Data.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SST39VF160-70-4C-EK |
Microchip Technology |
Flash USE 804-39VF16017CEK |
Data Sheet |
Negotiable |
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Negotiable |
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