Product Summary

The SI9955DY-T1 is a dual N-channel Enhancement mode MOSFET. The SI9955DY-T1 is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The applications of the SI9955DY-T1 include Battery switch, Load switch, Motor controls.

Parametrics

SI9955DY-T1 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 50V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current: 3A; (4)Pulsed Drain Current: 10A; (5)Power Dissipation for single Operation: 2.0W; (6) Power Dissipation for single Operation(Note 1a): 1.6W; (7)Power Dissipation for single Operation(Note 2a): 1W; (7)Power Dissipation for single Operation(Note 3a): 0.9W; (8)Operating Junction and Storage Temperature Range: -55℃ to +150℃.

Features

SI9955DY-T1 features: (1)3.0 A, 50 V. RDS(ON) = 0.130Ω @ VGS = 10V, RDS(ON) = 0.200Ω @ VGS = 4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High power and current handling capability.

Diagrams

SI9955DY-T1 Pin Configuration

Si9910
Si9910
Other

Data Sheet
Negotiable 
SI9910DJ
SI9910DJ
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-210: $1.13
210-250: $0.90
250-500: $0.80
500-1000: $0.69
SI9910DJ-E3
SI9910DJ-E3
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-1: $1.62
1-10: $1.24
10-100: $1.13
100-250: $0.90
SI9910DY
SI9910DY
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-410: $0.73
Si9910DY-E1-E3
Si9910DY-E1-E3
Other

Data Sheet
Negotiable 
SI9910DY-E3
SI9910DY-E3
Vishay/Siliconix
Power Driver ICs DRVR 1A Sngl. Non-Inv Hi Side
Data Sheet
0-1: $1.62
1-10: $1.24
10-100: $1.13
100-250: $0.90