(China (Mainland))
Product Summary
The SI9424DY is a P-Channel 2.5-V (G-S) MOSFET. The SI9424DY is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The applications of the SI9424DY include DC/DC converter, Load switch, Battery Protection.
Parametrics
SI9424DY absolute maximum ratings: (1)Drain-Source Voltage: -20V; (2)Gate-Source Voltage: ±9V; (3)Continuous Drain Current (TJ = 150℃): TA=25℃,±7.7A; TA=70℃, ±6.2A; (4)Pulsed Drain Current: ±30A; (5)Continuous Source Current (Diode Conduction): -2.3A; (6)Maximum Power Dissipation: TA=25℃,2.5W; TA=70℃, 1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to 150℃.
Features
SI9424DY features: (1)-8.0 A, -20 V. RDS(on) = 0.024Ω @ VGS = -4.5V, RDS(on) = 0.032Ω @ VGS = -2.5 V; (2)Low gate charge (23nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI9424DY |
Fairchild Semiconductor |
MOSFET Single P-Ch 20V/10V |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
|
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|
SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
|
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|
SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
|
||||
|
SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
|
||||
|
SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
|
||||
|
SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
|
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