(China (Mainland))
Product Summary
The SI9410DY-T1 is an N-channel enhancement mode field-effect transistor. The SI9410DY-T1 is in a plastic package using TrenchMOS technology. The applications of the SI9410DY-T1 include DC to DC convertors, DC motor control, Lithium-ion battery applications, Notebook PC, Portable equipment applications.
Parametrics
SI9410DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current: TA=25℃, 7.0A; TA=70℃, 5.8A; (4)Pulsed Drain Current: 20A; (5)Continuous Source Current: 2.8A; (6)Power Dissipation: TA=25℃, 2.5W; TA=70℃, 1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to 150℃; (8)Maximum Junction-to-Ambient: 50℃/W.
Features
SI9410DY-T1 features: (1) Low on-state resistance; (2) Fast switching; (3) Trench MOS technology.
Diagrams
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 SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
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SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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|
SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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|
SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
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