(China (Mainland))
Product Summary
The SI4416DY-T1 is a N-Channel 30-V (D-S) MOSFET.
Parametrics
SI4416DY-T1 absolute maxing ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: 9.0 A; (4)Pulsed Drain Current IDM: 50 A; (5)Continuous Source Current (Diode Conduction) IS: 2.1 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI4416DY-T1 features: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4416DY-T1 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4416DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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