(China (Mainland))
Product Summary
Parametrics
Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Power - Max: 150mW
Current - Continuous Drain (Id) @ 25° C: 200mA
Gate Charge (Qg) @ Vgs: -
Input Capacitance (Ciss) @ Vds: 50pF @ 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Rohm Semiconductor
Package / Case: SOT-723
Supplier Device Package: VMT3
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 RTM002P02T2L |
ROHM Semiconductor |
MOSFET P-CH 20V 200MA |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
RTM002P02 |
Other |
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Data Sheet |
Negotiable |
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RTM002P02FST2L |
ROHM Semiconductor |
MOSFET P CHANNEL |
Data Sheet |
Negotiable |
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|
RTM002P02T2L |
ROHM Semiconductor |
MOSFET P-CH 20V 200MA |
Data Sheet |
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