(China (Mainland))
Product Summary
Parametrics
Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 12.5A
Gate Charge (Qg) @ Vgs: 28nC @ 4.5V
Drain to Source Voltage (Vdss): 24V
Manufacturer: ON Semiconductor
Input Capacitance (Ciss) @ Vds: 3440pF @ 20V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTD110N02R |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
Negotiable |
|
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|
NTD110N02R-001 |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
Negotiable |
|
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|
NTD110N02RT4G |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
|
|
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|
NTD110N02RG |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
Negotiable |
|
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|
NTD110N02R-001G |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
Negotiable |
|
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|
NTD110N02RT4 |
ON Semiconductor |
MOSFET 24V 110A N-Channel |
Data Sheet |
Negotiable |
|
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