(China (Mainland))
Product Summary
The MPSA55 is an Amplifier Transistor.
Parametrics
MPSA55 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 60Vdc; (2)Collector-Base Voltage, VCBO: 60Vdc; (3)Emitter-Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current - Continuous IC: 500 mAdc; (5)Total Device Dissipation @ TA = 25℃ PD: 625mW; Derate above 25℃: 5.0mW/℃; (6)Total Device Dissipation, @ TC = 25℃, PD: 1.5Watts; Derate above 25℃: 12mW/℃; (7)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
MPSA55 features: (1)Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0), V(BR)CEO: 60Vdc; (2)Emitter-Base Breakdown Voltage (IE = 100 μAdc, IC = 0), V(BR)EBO: 4.0Vdc; (3)Collector Cutoff Current (VCE = 60 Vdc, IB = 0), ICES: 0.1μAdc; (4)Collector Cutoff Current, (VCB = 60 Vdc, IE = 0): 0.1mAdc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MPSA55_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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MPSA55_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Gen Purp Amp |
Data Sheet |
Negotiable |
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MPSA55_J25Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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MPSA55_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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 |
MPSA55-A |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 500mA 80V |
Data Sheet |
Negotiable |
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MPSA55RLRA |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 60V PNP |
Data Sheet |
Negotiable |
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MPSA55RLRAG |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 60V PNP |
Data Sheet |
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MPSA55 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Med Power |
Data Sheet |
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