(China (Mainland))
Product Summary
The MMBT5551 is a NPN General Purpose Amplifier. This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.
Parametrics
MMBT5551 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 160 V; (2)VCBO, Collector-Base Voltage: 180 V; (3)VEBO, Emitter-Base Voltage: 6.0 V; (4)IC, Collector Current - Continuous: 600 mA; (5)TJ, Tstg, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
MMBT5551 features: (1)PD, Total Device Dissipation: 625mW; Derate above 25℃: 5.0mW/℃; (2)RθJC, Thermal Resistance, Junction to Case: 83.3℃/W; (3)RθJA, Thermal Resistance, Junction to Ambient: 200℃/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MMBT5551 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
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MMBT5551_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
Negotiable |
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MMBT5551LT3 |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
Negotiable |
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MMBT5551LT3G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
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MMBT5551-TP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 160V |
Data Sheet |
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MMBT5551-T |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) 600mA 160V |
Data Sheet |
Negotiable |
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MMBT5551M3T5G |
ON Semiconductor |
Transistors Bipolar (BJT) SOT-723 GP NPN TRANS |
Data Sheet |
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MMBT5551LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 600mA 160V NPN |
Data Sheet |
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