(China (Mainland))
Product Summary
The MD7IC2050NBR1 is a RF LDMOS wideband integrated power amplifier designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
Parametrics
MD7IC2050NBR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃; (7)Input Power Pin: 28 dBm.
Features
MD7IC2050NBR1 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Production Tested in a Symmetrical Doherty Configuration; (3)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (4)On-Chip Matching (50 Ohm Input, DC Blocked); (5)Integrated Quiescent Current Temperature Compensation with; (6)Enable/Disable Function (1); (7)Integrated ESD Protection; (8)225℃ Capable Plastic Package; (9)RoHS Compliant; (10)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MD7IC2050NBR1 |
Freescale Semiconductor |
Power Amplifiers HV7IC 2100MHZ TO272WB14 |
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MD7IC2050NBR1 |
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Data Sheet |
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