MC74VHC1G02DFT1G

CMOS 2-input NOR gate, -0.5 to +7.0 V, Power Down Protection, 200 mW

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PartNumber:: MC74VHC1G02DFT1G

Brand:: ON Semiconductor - ON | Pack: SOT | D/C: 10+

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Products Upload time: 2011-07-22

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Part Number:MC74VHC1G02DFT1G
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Product Summary

The MC74VHC1G02DFT1G is an advanced high speed CMOS 2-input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G02DFT1G input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage. This allows the MC74VHC1G02DFT1G to be used to interface 5V circuits to 3V circuits.

Parametrics

MC74VHC1G02DFT1G absolute maximum ratings: (1)DC Supply Voltage: -0.5 to +7.0 V; (2)DC Input Voltage: -0.5 to +7.0 V; (3)DC Output Voltage: -0.5 to +7.0 V at VCC = 0, -0.5 to VCC + 0.5 V at High or Low State; (4)Input Diode Current: -20 mA; (5)Output Diode Current (VOUT < GND; VOUT > VCC): +20 mA; (6)DC Output Current, per Pin: +25 mA; (7)DC Supply Current, VCC and GND: +50 mA; (8)Power dissipation in still air, SC-88A: 200 mW; (9)Lead temperature, 1 mm from case for 10 s: 260 ℃; (10)Storage temperature: -65 to +150 ℃.

Features

MC74VHC1G02DFT1G features: (1)High Speed: tPD = 3.0ns (Typ) at VCC = 5V; (2)Low Power Dissipation: ICC = 2μA (Max) at TA = 25℃; (3)Power Down Protection Provided on Inputs; (4)Balanced Propagation Delays; (5)Pin and Function Compatible with Other Standard Logic Families; (6)Latchup Performance Exceeds 300mA; (7)ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V.