Product Summary

The M29W640GB70NA6E is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640GB70NA6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

M29W640GB70NA6E absolute maximum ratings: (1)Temperature Under Bias:–50℃ to 125℃; (2)Storage Temperature:–65℃ to 150℃; (3)Input or Output Voltage:–0.6V to VCC +0.6V; (4)Supply Voltage:–0.6V to 4V; (5)Identification Voltage:–0.6V to 13.5V; (6)Program Voltage:–0.6V to 13.5V.

Features

M29W640GB70NA6E features: (1)Supply Voltage: VCC = 2.7 to 3.6 V for Program/Erase/Read, VPP =12 V for Fast Program (optional); (2)Asynchronous Random/Page Read:Page Width: 4 words, Page Access: 25 ns, Random Access: 60 ns, 70 ns, 90 ns; (3)Fast Program commands:2 word/4 byte Program (without VPP=12 V),4 word/8 byte Program (with VPP=12 V),16 word/32 byte Write Buffer; (4)Programming time:10 μs per byte/word typical,Chip Program time: 10 s (4-word Program); (5)Memory organization: Eight 8 Kbytes Boot blocks (top or bottom)127 Main blocks, 64 Kbytes each; (6)Program/Erase controller:Embedded byte/word program algorithms; (7)Program/Erase Suspend and Resume:Read from any block during Program ; (8)Suspend:Read and Program another block during Erase Suspend; (9)ECOPACK packages; (10)128 word Extended Memory block:Extra block used as security block or to store additional information; (11)Low power consumption:Standby and Automatic Standby; (12)Unlock Bypass Program command:Faster Production/Batch Programming; (13)Common Flash Interface: 64-bit Security Code; (14)VPP/WP pin for Fast Program and Write Protect; (15)Temporary Block Unprotection mode; (16)100,000 Program/Erase cycles per block.

Diagrams

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