Product Summary

The IRLR3705Z HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRLR3705Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parametrics

IRLR3705Z absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 89 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 63 A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 42 A; (4)Pulsed Drain Current: 360 A; (5)PD @TC = 25℃ Power Dissipation: 130 W; (6)Linear Derating Factor: 0.88 W/℃; (7)Gate-to-Source Voltage: ±16 V; (8)Single Pulse Avalanche Energy: 110 mJ; (9)Single Pulse Avalanche Energy Tested Value: 190 mJ; (10)Operating Junction and Storage Temperature Range: -55 to +175 ℃.

Features

IRLR3705Z features: (1)Logic Level; (2)Advanced Process Technology; (3)Ultra Low On-Resistance; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLR3705Z
IRLR3705Z

MOSFET N-CH 55V 42A DPAK
Data Sheet
0-300: $0.98
IRLR3705ZPBF
IRLR3705ZPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.25
1-25: $0.81
25-100: $0.59
100-250: $0.55
IRLR3705ZTRPBF
IRLR3705ZTRPBF
International Rectifier
MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl
Data Sheet
0-1: $1.25
1-25: $0.81
25-100: $0.59
100-250: $0.55