IRLR2703TRPBF

HEXFET power MOSFET, 30V, 23A, DPAK, 0.045Ω, IRLR2703TRPBF

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Price:: US $0.24~0.24 / piece [Get Latest Price]

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	US $0.24~0.24

PartNumber:: IRLR2703TRPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-13

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Part Number:IRLR2703TRPBF
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EKXG401ELL6R8MJ16S

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CM2030-A0TR

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Product Summary

The IRLR2703TRPBF is a HEXFET power MOSFET. The IRLR2703TRPBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRLR2703TRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Parametrics

IRLR2703TRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 23 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 16 A; (3)IDM Pulsed Drain Current: 96 A; (4)PD @TC = 25℃ Power Dissipation: 45 W; (5)Linear Derating Factor: 0.30 W/℃; (6)VGS Gate-to-Source Voltage: ±16 V; (7)EAS Single Pulse Avalanche Energy: 77 mJ; (8)IAR Avalanche Current: 14 A; (9)EAR Repetitive Avalanche Energy: 4.5 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ℃.

Features

IRLR2703TRPBF features: (1)Logic-Level Gate Drive; (2)Ultra Low On-Resistance; (3)Surface Mount; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.