Product Summary
The IRF7204 is a Fourth Generation HEXFET from International Rectifier and utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making IRF7204 ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parametrics
IRF7204 absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: -5.3A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: -4.2A; (3)IDM Pulsed Drain Current: -21A; (4)PD @TC = 25℃ Power Dissipation: 2.5W; (5)Linear Derating Factor: 0.020 W/℃; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: -1.7 V/nS; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150℃.
Features
IRF7204 features: (1)Adavanced Process Technology; (2)Ultra Low On-Resistance; (3)P-ChanneMOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF7204 |
MOSFET P-CH 20V 5.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7204PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7204TRPBF |
International Rectifier |
MOSFET MOSFT PCh -20V -5.3A 60mOhm 25nC |
Data Sheet |
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IRF7204TR |
MOSFET P-CH 20V 5.3A 8-SOIC |
Data Sheet |
Negotiable |
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