(China (Mainland))
Product Summary
Parametrics
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Supplier Device Package: TO-247
Input Capacitance (Ciss) @ Vds: 3000pF @ 25V
Manufacturer: Fairchild Semiconductor
Series: UltraFET™
Power - Max: 270W
Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V
Gate Charge (Qg) @ Vgs: 205nC @ 20V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 HUF75343G3 |
Fairchild Semiconductor |
MOSFET 75a 55V 0.009Ohm NCh UltraFET |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Fairchild Semiconductor |
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Data Sheet |
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Data Sheet |
Negotiable |
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Fairchild Semiconductor |
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Data Sheet |
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Data Sheet |
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Fairchild Semiconductor |
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Data Sheet |
Negotiable |
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Fairchild Semiconductor |
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Data Sheet |
Negotiable |
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