(China (Mainland))
Product Summary
The HEF4011BT is a Quadruple 2-input NAND gate. It provides the positive quadruple 2-input NAND function. The outputs of HEF4011BT are fully buffered for highest noise immunity and pattern insensitivity of output impedance. The applications of the HEF4011BT include Automotive and industrial.
Parametrics
HEF4011BT absolute maximum ratings: (1)supply voltage: -0.5 to +18 V; (2)input clamping current: 10 mA at VI < -0.5 V or VI > VDD + 0.5 V; (3)input voltage: -0.5 to VDD + 0.5 V; (4)output clamping current: 10 mA at VO < -0.5 V or VO > VDD + 0.5 V; (5)input/output current: 10 mA; (6)supply current: 50 mA; (7)storage temperature: -65 to +150 ℃; (8)ambient temperature: -40 to +125 ℃; (9)total power dissipation Tamb = -40 ℃ to + 125 ℃: DIP14: 750 mW, SO14: 500 mW; (10)power dissipation per output: 100 mW.
Features
HEF4011BT features: (1)Fully static operation; (2)5 V, 10 V, and 15 V parametric ratings; (3)Standardized symmetrical output characteristics; (4)Operates across the automotive temperature range from -40 ℃ to +125 ℃; (5)Complies with JEDEC standard JESD 13-B; (6)Inputs and outputs are protected against electrostatic effects.
Diagrams
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 HEF4011BT,652 |
NXP Semiconductors |
Gates (AND / NAND / OR / NOR) QUAD 2-IN NAND GATE |
Data Sheet |
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HEF4011BT,653 |
NXP Semiconductors |
Gates (AND / NAND / OR / NOR) QUADRUPLE 2-INPUT NAND GATE |
Data Sheet |
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