(China (Mainland))
Product Summary
Parametrics
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Current - Continuous Drain (Id) @ 25° C: 5.7A
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Manufacturer: Fairchild Semiconductor
Series: QFET™
Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds: 770pF @ 25V
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQD7P20TF |
Fairchild Semiconductor |
MOSFET 200V P-Channel QFET |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
FQD7N10 |
Other |
|
Data Sheet |
Negotiable |
|
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|
FQD7N10L |
Other |
|
Data Sheet |
Negotiable |
|
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|
FQD7N10LTF |
Fairchild Semiconductor |
MOSFET 100V N-Ch QFET Logic Level |
Data Sheet |
Negotiable |
|
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|
FQD7N10LTM |
Fairchild Semiconductor |
MOSFET 100V N-Ch QFET Logic Level |
Data Sheet |
|
|
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|
FQD7N10TF |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
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|
FQD7N10TM |
Fairchild Semiconductor |
MOSFET 100V N-Ch QFET |
Data Sheet |
Negotiable |
|
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