Product Summary

The FDS5680 is an N-Channel MOSFET. The FDS5680 is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS5680 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 60 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current - Continuous: 8 A; (4)PD Power Dissipation for Single Operation: 2.5 W; (5)TJ Tstg Operating and Storage Junction Temperature Range: -55 to +150 ℃.

Features

FDS5680 features: (1)Low gate charge (30nC typical); (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(0N); (4)High power and current handling capability.


Diagrams

FDS5680 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS5680
FDS5680
Fairchild Semiconductor
MOSFET SO-8 N-CH 60V
Data Sheet
0-1: $0.99
1-25: $0.88
25-100: $0.71
100-250: $0.61
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS5170N7
FDS5170N7
Fairchild Semiconductor
MOSFET 60V N-Ch PowerTrench
Data Sheet
Negotiable 
FDS5351
FDS5351
Fairchild Semiconductor
MOSFET 60V N-Channel PowerTrench
Data Sheet
0-1: $0.56
1-25: $0.43
25-100: $0.38
100-250: $0.33
FDS5670
FDS5670
Fairchild Semiconductor
MOSFET SO-8 N-CH 60V
Data Sheet
0-1: $1.06
1-25: $0.95
25-100: $0.77
100-250: $0.68
FDS5672
FDS5672
Fairchild Semiconductor
MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET
Data Sheet
0-1: $0.91
1-25: $0.81
25-100: $0.70
100-250: $0.56
FDS5680
FDS5680
Fairchild Semiconductor
MOSFET SO-8 N-CH 60V
Data Sheet
0-1: $0.99
1-25: $0.88
25-100: $0.71
100-250: $0.61
FDS5682
FDS5682
Fairchild Semiconductor
MOSFET 60V N-CH. FET 20 MO SO8 TR
Data Sheet
Negotiable