Product Summary

Parametrics

Series: -
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2) (Ohms): 47k
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Manufacturer: Rohm Semiconductor
Frequency - Transition: 250MHz
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Package / Case: EMT5
Supplier Device Package: EMT5
Packaging: Cut Tape (CT)

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
EMG8T2R
EMG8T2R

ROHM Semiconductor

Transistors Switching (Resistor Biased) DUAL NPN 50V 100MA

Data Sheet

0-8000: $0.06
8000-16000: $0.05
16000-32000: $0.05
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
EMG8T2R
EMG8T2R

ROHM Semiconductor

Transistors Switching (Resistor Biased) DUAL NPN 50V 100MA

Data Sheet

0-8000: $0.06
8000-16000: $0.05
16000-32000: $0.05
EMG8
EMG8

Other


Data Sheet

Negotiable