Product Summary

The C2655 is a transistor. The device is suitable for power amplifier applications and power switching applications.

Parametrics

C2655 absolute maximum ratings: (1)Collector-base voltage, VCBO: 50 V; (2)Collector-emitter voltage, VCEO: 50 V; (3)Emitter-base voltage, VEBO: 5 V; (4)Collector current, IC: 2 A; (5)Base current, IB: 0.5 A; (6)Collector power dissipation, PC: 900 mW; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.

Features

C2655 features: (1)Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A); (2)High collector power dissipation: PC = 900 mW; (3)High-speed switching: tstg = 1.0μs (typ.); (4)Complementary to 2SA1020.

Diagrams

C2655 dimension figure