Product Summary
The BD682 is a plastic, medium-power silicon PNP Darlington transistor. The device can be used as output devices in complementary general-purpose amplifier applications.
Parametrics
BD682 absolute maximum ratings: (1)collector-emitter voltage, VCEO: 100Vdc; (2)collector-base voltage, VCBO: 100Vdc; (3)emitter-base voltage, VEBO: 5.0Vdc; (4)collector current, IC: 4.0Adc; (5)base current, IB: 0.1Adc; (6)total device dissipation @Tc=25℃, PD: 40W; 0.32W/℃ when derate above 25℃; (7)operating and storage junction temperature range, Tj, Tstg: -55 to 150℃.
Features
BD682 features: (1)High DC Current Gain - hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; (2)Monolithic Construction; (3)682 is complementary with BD675, 675A, 677, 677A, 679, 679A, 681; (4)Pb-Free Package are Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BD682 |
STMicroelectronics |
Transistors Darlington PNP Power Darlington |
Data Sheet |
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BD682G |
ON Semiconductor |
Transistors Darlington 4A 100V 40W PNP |
Data Sheet |
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BD682S |
Fairchild Semiconductor |
Transistors Darlington PNP Epitaxial Sil |
Data Sheet |
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BD682STU |
Fairchild Semiconductor |
Transistors Darlington PNP Epitaxial Sil |
Data Sheet |
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BD682T |
ON Semiconductor |
Transistors Darlington 4A 100V 40W PNP |
Data Sheet |
Negotiable |
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BD682TG |
ON Semiconductor |
Transistors Darlington 4A 100V 40W PNP |
Data Sheet |
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