Product Summary
The BD651 is a NPN silicon power darlington.
Parametrics
BD651 absolute maximum ratings: (1)Collector-base voltage (IE = 0), VCBO: 140V; (2)Collector-emitter voltage (IB = 0), VCEO: 120V; (3)Emitter-base voltage, VEBO: 5 V; (4)Continuous collector current, IC: 8 A; (5)Peak collector current, ICM: 12 A; (6)Continuous base current, IB: 0.3 A; (7)Continuous device dissipation at (or below) 25℃ case temperature, Ptot: 62.5 W; (8)Continuous device dissipation at (or below) 25℃ free air temperature, Ptot: 2 W; (9)Unclamped inductive load energy, 0.5IC2: 50 mJ; (10)Operating junction temperature range, Tj: -65 to +150℃; (11)Storage temperature range, Tstg: -65 to +150℃; (12)Lead temperature 3.2 mm from case for 10 seconds, TL: 260℃.
Features
BD651 features: (1)lDesigned for Complementary Use with BD646, BD648, BD650 and BD652; (2)62.5 W at 25℃ Case Temperature; (3)8 A Continuous Collector Current; (4)Minimum hFE of 750 at 3 V, 3 A.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BD651 |
Bourns |
Transistors Darlington 62.5W NPN Silicon |
Data Sheet |
Negotiable |
|
|||||||||||||
BD6510F |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
BD6510F-E2 |
ROHM Semiconductor |
Specialty Function Logic USB HIGH SIDE SWITCH H ACTIVE |
Data Sheet |
|
|
|||||||||||||
BD6512F |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
BD6512F-E2 |
ROHM Semiconductor |
Switching Converters, Regulators & Controllers USB High Side Switch H Active |
Data Sheet |
|
|
|||||||||||||
BD6513F-E2 |
ROHM Semiconductor |
Switching Converters, Regulators & Controllers USB HIGH SIDE SWITCH L ACTIVE |
Data Sheet |
|
|
|||||||||||||
BD6516F |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
BD6517F |
Other |
Data Sheet |
Negotiable |
|