(China (Mainland))
Product Summary
The 74HCT2G08DP.1251 is a high-speed Si-gate CMOS device.
Parametrics
74HCT2G08DP.1251 absolute maximum ratings: (1)supply voltage: -0.5 to +7.0 V; (2)input diode current: ±20 mA at VI < -0.5 V or VI > VCC + 0.5 V; (3)output diode current: ±20 mA at VO < -0.5 V or VO > VCC + 0.5 V; (4)output source or sink current: 25 mA at -0.5 V < VO < VCC + 0.5 V; (5)VCC or GND current: 50 mA; (6)storage temperature: -65 to +150 ℃; (7)PD power dissipation: 300 mW at Tamb = -40 to +125 ℃.
Features
74HCT2G08DP.1251 features: (1)Wide supply voltage range from 2.0 to 6.0 V; (2)Symmetrical output impedance; (3)High noise immunity; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 8 pins package; (7)Output capability is standard; (8)ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V.; (9)Specified from -40 to +85℃ and -40 to +125℃.
Diagrams
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74HC/HCT02 |
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74HC/HCT03 |
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74HC/HCT10 |
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74HC/HCT107 |
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74HC/HCT109 |
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