(China (Mainland))
Product Summary
The 2SK2610 is a TOSHIBA field effect transistor silicon N-channel MOS type.
Parametrics
2SK2610 absolute maximum ratings: (1)Drain-source voltage VDSS: 900 V; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 900 V; (3)Gate-source voltage VGSS: ±30 V; (4)Drain power dissipation (Tc = 25℃) PD: 150 W; (5)Single pulse avalanche energy EAS: 595 mJ; (6)Avalanche current IAR: 5 A; (7)Repetitive avalanche energy EAR: 15 mJ; (8)Channel temperature Tch: 150 ℃; (9)Storage temperature range Tstg: -55~150 ℃.
Features
2SK2610 features: (1)Low drain-source ON resistance: RDS(ON)=2.3Ω(TYP); (2)High forward transfer admittance: |Yfs|=4.4S(TYP); (3)Low leakage current: IDSS=100μA(MAX)(VDS=720V); (4)Enhancement-mode: Vth=2.0~4.0V(VDS=10V, ID=1mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK2610 |
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MOSFET N-CH 900V 5A TO-3PN |
Data Sheet |
Negotiable |
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2SK2610(F,T) |
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MOSFET N-CH 900V 5A TO-3PN |
Data Sheet |
Negotiable |
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