Product Summary

The SI9433DY-T1 is a P-Channel 20-V (D-S) MOSFET.

Parametrics

SI9433DY-T1 absolute maxing ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±5.4 A; (4)Pulsed Drain Current IDM: ±20 A; (5)Continuous Source Current (Diode Conduction) IS: -2.6 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI9433DY-T1 specifications: (1)Gate Threshold Voltage VGS(th): -0.8 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -20 A; (5)Drain-Source On-State Resistance rDS(on): 0.032 to 0.045 Ω; (6)Forward Transconductance gfs: 15 S; (7)Diode Forward Voltage VSD: -0.76 to -1.2 V.

Diagrams

SI9433DY-T1 diagram

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SI9407AEY-T1-E3

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Data Sheet

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Data Sheet

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1-25: $0.68
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Data Sheet

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SI9410BDY-T1-GE3
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Data Sheet

0-840: $0.47
840-2500: $0.26
2500-5000: $0.25
5000-7500: $0.22