(China (Mainland))
Product Summary
The PMBT5401 is a PNP high-voltage transistor in a SOT23 plastic package. It is suitable for Switching and amplification in high voltage applications such as telephony.
Parametrics
PMBT5401 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: -160 V; (2)VCEO, collector-emitter voltage open base: -150 V; (3)VEBO, emitter-base voltage open collector: -5V; (4)IC, collector current (DC): -300 mA; (5)ICM, peak collector current: -600 mA; (6)IBM, peak base current: -100 mA; (7)Ptot, total power dissipation: 250 mW; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj,junction temperature: 150℃; (10)Tamb, operating ambient temperature: -65 to +150℃.
Features
PMBT5401 features: (1)Low current (max. 300 mA); (2)High voltage (max. 150 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 PMBT5401 |
Other |
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Data Sheet |
Negotiable |
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PMBT5401 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-11 |
Data Sheet |
Negotiable |
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PMBT5401,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-11 |
Data Sheet |
Negotiable |
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PMBT5401,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) PNP HV 300mA 150V |
Data Sheet |
Negotiable |
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