Product Summary

The NJM4558M-TE2 integrated circuit is a dual high-gain operational amplifier internally compensted and constructed on a single silicon chip using advanced epitaxial process.

Parametrics

NJM4558M-TE2 absolute maximum ratings: (1)supply voltage: ±18 V; (2)differential input voltage: ±30 V; (3)input voltage: ±15 V; (4)power dissipation: 500 mW; (5)operating temperature range: -20 to +75 ℃; (6)storage temperature range: -40 to +125 ℃.

Features

NJM4558M-TE2 electrical characteristics: (1)input offset voltage: 0.5 mV at Rs≤10kΩ; (2)input offset current: 5 nA; (3)input bias current: 50 nA; (4)input resistance: 0.3 MΩ min and 5MΩ typ; (5)large signal voltage gain: 86 dB min and 100 dB typ; (6)maximum output voltage swing 1: ±12 V min and ±14 V typ at RL≥10kΩ; (7)maximum output voltage swing 2: ±10 V min and ±13 V typ at RL≥2kΩ; (8)input common mode voltage range: ±12 V min and ±14 V typ.

Diagrams

NJM4558M-TE2 equivalent circuit diagram

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