(China (Mainland))
Product Summary
The MRF7S38075HR3 is a RF power field effect transistor designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
Parametrics
MRF7S38075HR3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature TJ: 225 ℃.
Features
MRF7S38075HR3 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (5)RoHS Compliant; (6)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 MRF7S38075HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 3600MHZ 12W 30V NI780H |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
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MRF750 |
Other |
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Data Sheet |
Negotiable |
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MRF752 |
Other |
|
Data Sheet |
Negotiable |
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MRF7P20040HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780H-4 |
Data Sheet |
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MRF7P20040HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780H-4 |
Data Sheet |
Negotiable |
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|
MRF7P20040HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4 |
Data Sheet |
|
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|
MRF7P20040HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 2GHZ 40W NI780HS-4 |
Data Sheet |
Negotiable |
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