Product Summary

The MPSA18 is designed for low noise, high gain, applications at collector currents from 1m A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Parametrics

MPSA18 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 45 V; (2)VCBO, Collector-Base Voltage: 45 V; (3)VEBO, Emitter-Base Voltage: 6.5 V; (4)IC, Collector Current - Continuous: 100 mA; (5)TJ, Tstg, Operating and Storage Junction Temperature Range : -55 to +150℃.

Features

MPSA18 features: (1)V(BR)CEO Collector-Emitter Breakdown Voltage, IC = 10 mA, IB = 0: 45 V; (2)V(BR)CBO Collector-Base Breakdown Voltage, IC = 100μA, IE = 0: 45 V; (3)V(BR)EBO, Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.5 V; (4)ICBO Collector Cutoff Current VCB = 30 V, IE = 0: 50 nA; (5)VCE(sat) Collector-Emitter Saturation Voltage, IC = 10 mA, IB = 0.5 mA: 0.2V; IC = 50 mA, IB = 5.0 mA: 0.3V; (6)VBE(on) Base-Emitter On Voltage: VCE = 5.0 V, IC = 1.0 mA: 0.7 V.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MPSA18
MPSA18
Central Semiconductor
Transistors Bipolar (BJT) NPN Gen Pur SS
Data Sheet
0-2500: $0.27
2500-5000: $0.26
5000-10000: $0.24
MPSA18_D26Z
MPSA18_D26Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Transistor General Purpose
Data Sheet
Negotiable 
MPSA18_D26Z_Q
MPSA18_D26Z_Q
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Transistor General Purpose
Data Sheet
Negotiable 
MPSA18_D27Z
MPSA18_D27Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Gen Purp Amp
Data Sheet
Negotiable 
MPSA18_D74Z
MPSA18_D74Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Gen Purp Amp
Data Sheet
Negotiable 
MPSA18_D75Z
MPSA18_D75Z
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Transistor General Purpose
Data Sheet
Negotiable 
MPSA18_Q
MPSA18_Q
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Transistor General Purpose
Data Sheet
Negotiable 
MPSA18G
MPSA18G
ON Semiconductor
Transistors Bipolar (BJT) 200mA 45V NPN Low Noise
Data Sheet
Negotiable