(China (Mainland))
Product Summary
The MG300J2YS50 is a Silicon N Channel IGBT. It is designed for High Power Switching, Motor Control Applications.
Parametrics
MG300J2YS50 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES: ±20 V; (3)Collector current DC IC: 300 A, 1ms ICP: 600 A; (4)Forward current DC IF: 300 A, 1ms IFM: 600 A; (5)Collector power dissipation (Tc = 25℃) PC: 1300 W; (6)Junction temperature Tj: 150 ℃; (7)Storage temperature range Tstg: -40 ~ 125 ℃; (8)Isolation voltage VIsol: 2500(AC 1 min.) V.
Features
MG300J2YS50 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed: tf = 0.30μs (max) (IC = 300A), trr = 0.15μs (max) (IF = 300A); (6)Low saturation voltage: VCE (sat) = 2.70V (max) (IC = 300A).
Diagrams
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 MG300Q2YS60A |
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IGBT MOD CMPCT DUAL 1200V 300A |
Data Sheet |
Negotiable |
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MG300Q2YS61 |
Other |
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Data Sheet |
Negotiable |
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MG300Q2YS65H |
Other |
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Data Sheet |
Negotiable |
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