(China (Mainland))
Product Summary
Parametrics
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 44A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 26A, 10V
Power - Max: 107W
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRFR1205TRL |
|
MOSFET N-CH 55V 44A DPAK |
Data Sheet |
Negotiable |
|
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 |
IRFR1205TRLPBF |
International Rectifier |
MOSFET MOSFT 55V 37A 27mOhm 43.3nC |
Data Sheet |
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