Product Summary

The IRF7421D1TR is a MOSFET and Schottky Diode. The IRF7421D1TR offers the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The IRF7421D1TR has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques.

Parametrics

IRF7421D1TR absolute maximum ratings: (1)ID @ TA =25℃ Continuous Drain Current, VGS @ 10V: 6.4A; (2)ID @ TA =70℃ Continuous Drain Current, VGS @ 10V: 3.3A; (3)Pulsed Drain Current: 33A; (4)PD @TA = 25℃ Power Dissipation (PCB Mount): 2.5W; (5)Linear Derating Factor (PCB Mount): 8.0mW/℃; (6)Gate-to-Source Voltage: ±20V; (7)Junction and Storage Temperature Range: -55℃ to 150℃.

Features

IRF7421D1TR features: (1) Co-packaged HEXFETò Power MOSFET and Schottky Diode; (2) Ideal For Synchronous Regulator Applications; (3) Generation V Technology; (4)SO-8 Footprint.

Diagrams

IRF7421D1TR Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7421D1TR
IRF7421D1TR

MOSFET N-CH 30V 5.8A 8-SOIC
Data Sheet
0-4000: $0.80
IRF7421D1TRPBF
IRF7421D1TRPBF
International Rectifier
MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC
Data Sheet
0-1: $0.74
1-25: $0.43
25-100: $0.27
100-250: $0.25