FQD13N10TM

FQD13N10TM, 100V N-Channel MOSFET, TO252, 100V, 95mJ, 10A, 2.5W

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Price:: US $0.24~0.24 / piece [Get Latest Price]

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PartNumber:: FQD13N10TM

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 11+

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Products Upload time: 2012-08-06

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Part Number:FQD13N10TM
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Product Summary

The FQD13N10TM is a 100V N-Channel MOSFET. The FQD13N10TM is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The FQD13N10TM has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Parametrics

FQD13N10TM absolute maximum ratings: (1)Drain-Source Voltage: 100V; (2)Drain Current: Continuous (TC=25℃): 10A, Continuous (TC=100℃): 6.3A; (3)Drain Current - Pulsed: 40 A; (4)Gate-Source Voltage: ±25 V; (5)Single Pulsed Avalanche Energy: 95mJ; (6)Avalanche Current: 10 A; (7)Repetitive Avalanche Energy: 4.0mJ; (8)Peak Diode Recovery dv/dt: 6.0 V/ns; (9)Power Dissipation (TA=25℃): 2.5 W; (10)Power Dissipation (TC=25℃): 40 W, Derate above 25℃ 0.32 W/℃; (11)Operating and Storage Temperature Range: -55℃ to +150℃; (12)Maximum lead temperature for soldering purposes,; (13)1/8" from case for 5 seconds: 300℃.

Features

FQD13N10TM features: (1)10A, 100V, RDS (on) = 0.18Ω @ VGS=10V; (2) Low gate charge (typical 12 nC); (3) Low Crss (typical 20 pF); (4) Fast switching; (5)100% avalanche tested; (6) Improved dv/dt capability.