(China (Mainland))
Product Summary
The FDB2532 is an N-Channel PowerTrench MOSFET. It is used in DC/DC converters and Off-Line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V Systems, High Voltage Synchronous Rectifier, Direct Injection / Diesel Injection Systems, 42V Automotive Load Control, Electronic Valve Train Systems.
Parametrics
FDB2532 absolute maximum ratings: (1)VDSS Drain to Source Voltage: 150 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID Drain Current Continuous (TC = 25℃, VGS = 10V): 79 A; (4)EAS Single Pulse Avalanche Energy: 400 mJ; (5)PD Power dissipation: 310 W, Derate above 25℃: 2.07 W/℃; (6)TJ, TSTG Operating and Storage Temperature: -55 to 175 ℃.
Features
FDB2532 features: (1)rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 33A; (2)Qg(tot) = 82nC (Typ.), VGS = 10V; (3)Low Miller Charge; (4)Low QRR Body Diode; (5)UIS Capability (Single Pulse and Repetitive Pulse); (6)Qualified to AEC Q101.
Diagrams
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 FDB2532 |
Fairchild Semiconductor |
MOSFET 150V N-Channel QFET Trench |
Data Sheet |
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FDB2532_F085 |
Fairchild Semiconductor |
MOSFET 150V N-Channel PowerTrench MOSFET |
Data Sheet |
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