Product Summary

The BD435 is a plastic, medium-power silicon NPN transistor. The device is suitable for amplifier and switching applications.

Parametrics

BD435 absolute maximum ratings: (1)collector-emitter voltage, VCEO: 32Vdc; (2)collector-base voltage, VCBO: 32Vdc; (3)emitter-base voltage, VEBO: 5.0Vdc; (4)collector current, IC: 4.0Adc; (5)base current, IB: 1.0Adc; (6)total device dissopation @ Tc=25℃, PD: 36Watts; 288W/℃ when derate above 25℃; (7)operating and storage junction temperature range, TJ, Tstg: -55 to 150℃.

Features

BD435 features: (1)Pb-Free Package is Available.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD435S
BD435S
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.30
1-25: $0.20
25-100: $0.17
100-250: $0.15
BD435STU
BD435STU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.27
1-25: $0.23
25-100: $0.21
100-250: $0.14
BD435G
BD435G
ON Semiconductor
Transistors Bipolar (BJT) BIP NPN 4A 22V
Data Sheet
0-1: $0.38
1-25: $0.29
25-100: $0.26
100-500: $0.19
BD435
BD435
STMicroelectronics
Transistors Bipolar (BJT) NPN Medium Power
Data Sheet
0-1: $0.24
1-10: $0.22
10-100: $0.19
100-250: $0.18