Product Summary
The BAS170W is a silicon schottky diode.
Parametrics
BAS170W absolute maximum ratings: (1)Diode reverse voltage VR: 70 V; (2)Forward current IF: 70 mA; (3)Surge forward current, t ≤10 ms IFSM: 100; (4)Total power dissipation. TS = 97 ℃. Ptot: 250 mW; (5)Junction temperature Tj: 150 ℃; (6)Operating temperature range Top: -55 to 125℃; (7)Storage temperature Tstg: -55 to 150℃.
Features
BAS170W features: (1)General-purpose diode for high-speed switching; (2)Circuit protection; (3)Voltage clamping; (4)High-level detection and mixing.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() BAS170WS-V-GS08 |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 70mA 70 Volt |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BAS170WS-V-GS18 |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 70 Volt 70mA 600mA IFSM |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BAS170WS |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BAS170W |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|