(China (Mainland))
Product Summary
The BAS170W is a silicon schottky diode.
Parametrics
BAS170W absolute maximum ratings: (1)Diode reverse voltage VR: 70 V; (2)Forward current IF: 70 mA; (3)Surge forward current, t ≤10 ms IFSM: 100; (4)Total power dissipation. TS = 97 ℃. Ptot: 250 mW; (5)Junction temperature Tj: 150 ℃; (6)Operating temperature range Top: -55 to 125℃; (7)Storage temperature Tstg: -55 to 150℃.
Features
BAS170W features: (1)General-purpose diode for high-speed switching; (2)Circuit protection; (3)Voltage clamping; (4)High-level detection and mixing.
Diagrams
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Pricing (USD) |
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 BAS170W |
Other |
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Data Sheet |
Negotiable |
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BAS170WS |
Other |
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Data Sheet |
Negotiable |
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BAS170WS-V-GS08 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 70mA 70 Volt |
Data Sheet |
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BAS170WS-V-GS18 |
Vishay Semiconductors |
Schottky (Diodes & Rectifiers) 70 Volt 70mA 600mA IFSM |
Data Sheet |
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