(China (Mainland))
Product Summary
The BAS16TT1 is a silicon switching diode.
Parametrics
BAS16TT1 absolute maximum ratings: (1)Continuous Reverse Voltage VR: 75 V; (2)Recurrent Peak Forward Current IF: 200 mA; (3)Peak Forward Surge Current; (4)Pulse Width = 10μs IFM(surge): 500 mA.
Features
BAS16TT1 features: (1)Capacitance (VR = 0, f = 1.0 MHz) CD: 2.0 pF; (2)Reverse Recovery Time(IF = IR = 10 mA, RL = 50 W) (Figure 1)trr: 6.0 ns; (3)Stored Charge(IF = 10 mA to VR = 6.0 V, RL = 500 W) QS: 45 PC; (4)Forward Recovery Voltage(IF = 10 mA, tr = 20 ns)VFR: 1.75 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BAS16TT1 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 75V 200mA |
Data Sheet |
Negotiable |
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BAS16TT1G |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 75V 200mA |
Data Sheet |
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