(China (Mainland))
Product Summary
The 2SD1623T is the PNP / NPN epitaxial planar silicon transistor which is used as relay driver, lamp driver, electrical equipment.
Parametrics
2SD1623T absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: (--)60 V; (2)Collector-to-Emitter Voltage VCEO: (--)50 V; (3)Emitter-to-Base Voltage VEBO: (--)6 V; (4)Collector Current IC: (--)2 A; (5)Collector Current (Pulse) ICP: (--)4 A; (6)Collector Dissipation PC: 0.5 W, 1.3 W; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Tstg: --55 to +150℃.
Features
2SD1623T features: (1)Adoption of FBET, MBIT processes; (2)Low collector-to-emitter saturation voltage; (3)Large current capacity and wide ASO; (4)Fast switching speed; (5)The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SD1623T-TD-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 2A 50V |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
2SD1000 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SD1001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SD1005 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SD1005-BV |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SD1006 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SD1007 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
