(China (Mainland))
Product Summary
The 2SC4332-Z-E1 is an NPN silicon epitaxial transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. The 2SC4332-Z-E1 is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
Parametrics
2SC4332-Z-E1 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 100 V; (2)Collector to Emitter Voltage VCEO: 60 V; (3)Base to Emitter Voltage VEBO: 7.0 V; (4)Collector Current (DC) IC(DC): 5.0 A; (5)Collector Current (pulse) IC(pulse): 10 A; (6)Base Current (DC) IB(DC): 2.5 A; (7)Total Power Dissipation PT (TC = 25℃): 15 W; (8)Total Power Dissipation PT (TA = 25℃): 1.0, 2.0 W; (9)Junction Temperature Tj: 150 ℃; (10)Storage Temperature Tstg: -55 to +150 ℃.
Features
2SC4332-Z-E1 features: (1)Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A); (2)Fast switching speed: tf ≤ 0.3 μs MAX. (IC = 3 A); (3)High DC current gain.
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