(China (Mainland))
Product Summary
The HIP6601BCBZ is a Synchronous Rectified Buck MOSFET Driver. The HIP6601BCBZ-T is a high frequency, dual MOSFET driver specifically designed to drive two power N-Channel MOSFETs. The HIP6601BCBZ drives the lower gate in a synchronous rectifier to 12V, while the upper gate can be independently driven over a range from 5V to 12V.
Parametrics
HIP6601BCBZ absolute maximum ratings: (1)Supply Voltage (VCC): 15V; (2)Supply Voltage (PVCC): VCC + 0.3V; (3)BOOT Voltage (VBOOT - VPHASE): 15V; (4)Input Voltage (VPWM): GND - 0.3V to 7V; (5)Thermal Resistance: 97℃/W N/A; (6)Maximum Junction Temperature (Plastic Package): 150℃; (7)Maximum Storage Temperature Range: -65℃ to 150℃; (8)Maximum Lead Temperature (Soldering 10s): 300℃.
Features
HIP6601BCBZ features: (1)Drives Two N-Channel MOSFETs; (2)Adaptive Shoot-Through Protection; (3)Internal Bootstrap Device; (4)Supports High Switching Frequency; (5)Fast Output Rise Time; (6)Propagation Delay 30ns; (7)Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages; (8)Dual Gate-Drive Voltages for Optimal Efficiency; (9)Three-State Input for Output Stage Shutdown; (10)Supply Undervoltage Protection.
Diagrams
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 HIP6601BCBZ |
Intersil |
Power Driver ICs SYNCH-RECT BUCK FET DRVR W/REDUCED POR |
Data Sheet |
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HIP6601BCBZA |
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IC DRIVER MOSFET DUAL 8-SOIC |
Data Sheet |
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HIP6601BCBZ-T |
Intersil |
Power Driver ICs SYNCH-RECT BUCK FET DRVR W/REDUCED POR |
Data Sheet |
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HIP6601BCBZA-T |
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IC DRVR MOSFET SYNC BUCK 8-SOIC |
Data Sheet |
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